Zn diffusion depth effect on photoresponse uniformity in InP/InGaAs avalanche photodiodes

Abstract Numerical simulation of the electric field distribution and photocurrent response a planar InP/InGaAs avalanche photodiode is presented for small variations multiplication width. The Zn dopant diffusion front obtained by numerically simulating process. results indicate that while local peak value observed near device edge, it not associated with significant increase in response. Experimental mapping an shows at edge enhanced ~ 60% compared to centre Scanning electron microscope images diffused structures show depth 0.03 m centre. Simulations devices varied width magnitude expected enhancement consistent along active device.